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Fairchild Semiconductor announces the FDS3572, an 80 V N-channel MOSFET in SO-8 packaging, providing good overall system efficiencies in both primary-side DC/DC converter and secondary-side synchronous rectifier switching power supply designs. The device has a 7.5 nC Miller charge (Qgd), which, combined with the device’s low R_DS(on) (16 mΩ) adds up to a Figure of Merit (FOM= R_DS(on)× Qgd ) of 120. This device also features total gate charge of 31 nC, at V_GS = 10 V, a low Q_RR (70 nC), and high avalanche energy capability (E_AS = 515 mJ).

Fairchild Semiconductor

Fairchild Semiconductor International
http://www.fairchildsemi.com